copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 1 /6 SW20N03A absolute maximum ratings symbol parameter value unit v dss drain to source voltage 30 v i d continuous drain current (@t c =25 o c) 5.7* a continuous drain current (@t c =100 o c) 3.6* a i dm drain current pulsed (note 1) 23 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 41 mj e ar repetitive avalanche energy (note 1) 3 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 1.5 w derating factor above 25 o c 0.01 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c thermal characteristics symbol parameter value unit r thja thermal resistance, junction to ambient 86 o c /w *. drain current is limited by junction temperature. order codes item sales type marking package packaging 1 sw h 20n03a SW20N03A dfn3*3 reel n - channel enhanced mode dfn3*3 mosfet features ? high ruggedness ? low r ds( on ) (t yp 19m ? )@v gs =10v (t yp 23m ? )@v gs =4.5v ? low gate charge ( typ 14nc) ? improved dv/dt capability ? 100% avalanche tested ? application:dc - dc converter inverter synchronous rectification general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. bv dss :30 v i d : 5.7a r ds(on) : 19 m ? @v gs =10v 23 m ? @v gs =4.5v g(4) d(5,6,7,8) s(1,2,3) dfn3*3 n ote: r thja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. r thj c is guaranteed by design while r th ca is determined by the user's board design. 86 o c/w on a 1 in 2 pad of 2oz copper.
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 2 /6 SW20N03A electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 30 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.02 v/ o c i dss drain to source leakage current v ds =30v, v gs =0v 1 ua v ds =24v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 20v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 3 v r ds(on) drain to source on state resistance v gs =10v, i d =5.7a 19 25 m ? v gs =4.5v, i d =5.7a 23 30 m ? g fs forward transconductance v ds =5v, i d =5.7a 16 s dynamic characteristics c iss input capacitance v gs =0v, v ds =10v, f=1mhz 649 pf c oss output capacitance 127 c rss reverse transfer capacitance 90 t d(on) turn on delay time v ds =15v, i d =5.7a, r g =25?, v gs =10v (note 4,5) 5 ns t r rising time 41 t d(off) turn off delay time 49 t f fall time 27 q g total gate charge v ds =24v, v gs =10v, i d =5.7a (note 4,5) 14 nc q gs gate - source charge 2 q gd gate - drain charge 4 r g gate resistance v ds =0v, scan f mode 6.8 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 5.7 a i sm pulsed source current 23 a v sd diode forward voltage drop. i s =5.7a, v gs =0v 1.4 v t rr reverse recovery time i s =5.7a, v gs =0v, di f /dt=100a/us 34 ns q rr reverse recovery charge 3.5 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =2.52mh, i as =5.7a, v dd =15v, r g =25?, starting t j = 25 o c 3. i sd 5.7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 3 /6 SW20N03A fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 4. on - state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on - resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 4 /6 SW20N03A fig. 9. transient thermal response curve fig. 7 . maximum safe operating area fig. 8. c apacitance characteristics fig. 10. gate charge test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 5 /6 SW20N03A v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 11 . switching time test circuit & waveform fig. 13 . peak diode recovery dv/dt test circuit & waveform fig. 12 . unclamped inductive switching test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
copyright@ semipower electronic technology co., ltd. all rights reserved. nov. 2016. rev. 2.0 6 /6 SW20N03A disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com
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